Measurement accuracy analysis of the free carrier absorption determination of the electronic transport properties of silicon wafers

By introducing the random and systematic errors in simulated data computed from conventional frequency-scan and laterally resolved modulated free carrier absorption theory models, we investigate the relative determination sensitivities of three electronic transport properties, namely, carrier lifetime, carrier diffusivity and front surface recombination velocity of silicon wafers determined by frequency-scan and laterally resolved techniques. The phase and amplitude data with random errors as functions of the modulation frequency at zero pump-probe-beam separation or of the two-beam separation at four different modulation frequencies are simultaneously fitted to an appreciated carrier diffusion model to extract three transport parameters. The statistical results and fitted accuracies of the transport parameter determined by both techniques are theoretically analysed. Corresponding experimental results are carried out to compare to the simulated results. The simulated and experimental results show that the determination of the transport properties of silicon wafers by the laterally resolved technique are more accurate, as compared with that by the frequency-scan technique.     

Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures

The strain relaxation of an AlGaN barrier layer may be influenced by a thin cap layer above, and affects the transport properties of AlGaN/GaN heterostructures. Compared with the slight strain relaxation found in AlGaN barrier layer without cap layer, it is found that a thin cap layer can induce considerable changes of strain state in the AlGaN barrier layer. The degree of relaxation of the AlGaN layer significantly influences the transport properties of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is observed that electron mobility decreases with the increasing degree of relaxation of the AlGaN barrier, which is believed to be the main cause of the deterioration of crystalline quality and morphology on the AlGaN/GaN interface. On the other hand, both GaN and AlN cap layers lead to a decrease in 2DEG density. The reduction of 2DEG caused by the GaN cap layer may be attributed to the additional negative polarization charges formed at the interface between GaN and AlGaN, while the reduction of the piezoelectric effect in the AlGaN layer results in the decrease of 2DEG density in the case of AlN cap layer.     

Fano effect of a parallel-coupled triple Rashba quantum dot system

Using the nonequilibrium Keldysh Green's function technique, the Fano effect of a parallel-coupled triple Rashba quantum dot system is investigated. The conductance as a function of electron energy is numerically calculated. Compared with the case of a parallel-coupled double quantum dot system, two additional Fano resonance peaks occur in the conductance spectrum. By adjusting the structural parameters, the two Fano resonance peaks may change into the resonance peaks. In addition, the influence of Rashba spin-orbit interaction on the conductance is studied.     

Superexchange interaction enhancement of the quantum transport in a DNA-type molecule

We use the transfer matrix method and the Green function technique to theoretically study the quantum tunnelling through a DNA-type molecule. Ferromagnetic electrodes are used to produce the spin-polarized transmission probability and therefore the spin current. The distance-dependent crossover comes from the topological variation from the one-dimensional to the two-dimensional model transform as we switch on the interstrand coupling; a new base pair will present N-1 extrachannels for the charge and spin as N being the total base pairs. This will restrain the decay of the transmission and improve the stability of the quantum transport. The spin and charge transfer through the DNA-type molecule is consistent with the quantum tunneling barrier.     

Highly Efficient Organic Ultraviolet Photodetectors Based on Re(I) Complexes

High response organic ultraviolet photodetectors(UV-PDs) were demonstrated with 4,4',4'- tris[3-methyl-pheny(phenyl)amino]triphenylamine(m-MTDATA) and two Re(I) complexes, (bathocuproine)- Re(CO)₃Cl(Re-BCP) and (bathophenanthroline)Re(CO)₃Cl(Re-Bphen) to act as the electron donor and acceptor, respectively. UV-PDs have the configuration of indium tin oxide(ITO)/m-MTDATA(25 nm)/m-MTDATA:Re-complex (25―35 nm)/Re-complex(20 nm)/LiF(1 nm)/Al(200 nm) with different blend layer thicknesses of 25, 30 and 35 nm. The optimized PD based on Re-Bphen offers a corrected-dark photocurrent up to 760 μA/cm² at ?10 V, corresponding to a response of 310 mA/W which is among the best values reported for organic UV-PDs. Excellent electron transport ability makes for such high photo-to-electron conversion.     

Charging dynamics of polymer due to electron irradiation: A simultaneous scattering-transport model and preliminary results

We present a novel numerical model and simulate preliminarily the charging process of polymer subjected to electron irradiation of several 10 keV. The model includes the simultaneous processes of electron scattering and ambipolar transport and the influence of a self-consistent electric field on the scattering distribution of electrons. The dynamic spatial distribution of charges is obtained and validated by existing experimental data. Our simulations show that excess negative charges are concentrated near the edge of the electron range. However, the formed region of high charge density may extend to the surface and bottom of a kapton sample, due to the effects of electric field on electron scattering and charge transport, respectively. Charge trapping is then demonstrated to significantly influence the charge motion. The charge distribution can be extended to the bottom as the trap density decreases. Charge accumulation is therefore balanced by the appearance and increase of leakage current. Accordingly, our model and numerical simulation provide a comprehensive insight into the charging dynamics of polymer irradiated by electrons in the complex space environment.     

脑Willis环的一维血流动力学及氧输运特性的数值研究

Willis环是大脑侧枝循环的重要组成部分, 研究其血流动力学特性以及氧输运规律对脑缺血疾病的认知和预防有着非常重要的作用. 该文旨在利用一维血流动力学模型模拟整个Willis环的流量变化和压力分布, 并建立动脉内氧输运的一维模型以模拟Willis 环内氧分压的变化规律, 为研究脑组织内血液流动和氧输运打下基础. 首先, 基于弹性圆管内的一维非线性流动方程和状态方程建立血流动力学模型, 在一维对流扩散方程的基础上, 考虑由管腔向壁面的扩散和壁面细胞的新陈代谢消耗推导出氧输运特性方程. 通过 Lax-Wendroff两步法对血流动力学方程进行离散, 而在进行对流扩散方程的离散时, 则运用迎风格式. 通过数值计算得到了正常情况下Willis环各个血管任意位置的流量、压力和氧分压的变化曲线, 正常情况下各个位置的氧分压处于稳定的平衡状态. 最后, 还通过此模型进一步模拟了右侧颈内动脉狭窄对各个血管内流动的影响. 当狭窄程度达到80%时, 中脑动脉的流量和压力会明显下降, 造成其供应区域的血流减少. 同时, Willis环右侧血管内的氧分压会大大降低, 而左侧血管的氧分压会出现上升趋势, 但幅度要小于右侧血管降低的幅度.     

用拉格朗日相关结构研究圆盘启动过程的流体输运

利用粒子成像测速(PIV)技术,得到了圆盘启动涡环流场的速度分布和涡量分布.圆盘启动涡环流场的有限时间李雅普诺夫指数场(Finit-time Lyapunov exponents,FTLE)以及拉格朗日相关结构(Lagrangian coherent structures,LCS)被计算出来.基于圆盘启动涡环流场的有限时间李雅普诺夫指数场以及拉格朗日相关结构,通过跟踪流体质点,对圆盘启动涡环流场的输运情况进行了分析.在圆盘启动涡环形成过程中,流体发现被圆盘和相互排斥的拉格朗日相关结构分成三部分.剪切流窗口(vorticity-flux window)被发现,涡量流通过剪切流窗口进入涡核.涡环的非定常边界被确定,它由相互排斥的拉格朗日相关结构背风面、圆盘以及剪切流窗口组成.     

端基对二噻吩和苯并噻吩类共轭桥化合物电子结构及载流子传输性能的影响

采用密度泛函理论(DFT, TDDFT) B3LYP/6-31G(d)和PBE0/6-31G(d)方法对苯乙烯/乙炔为端基, 二噻吩(2T)、苯并二噻吩(TPT)和二苯并噻吩(PTP)为共轭桥的12个化合物进行了系统地计算研究. 在分别优化中性态与离子态几何构型的基础上, 获得了前线轨道能级、电离能(IPs)、电子亲合能(EAs)、重组能(λ_h/λ_e)和电子吸收光谱等信息. 结果表明, 苯乙炔基取代苯乙烯基对LUMO能级影响很小, 但HOMO能级明显降低, 能级差?E和激发能E_v增大, 吸收光谱蓝移10～30 nm, 多数苯乙炔基化合物的重组能均有所降低|端基相同共轭桥分别为2T, TPT和PTP时, HOMO能级逐渐降低, LUMO能级逐渐升高, ?E和E_v依次增大, 吸收光谱依次蓝移30～45 nm. 研究结果还表明, TPT共轭桥化合物的重组能较小, 且λ_h与λ_e相近, 有利于载流子传输平衡, 提高传输速率. 本文设计的苯乙炔基苯并二噻吩(DPATPT)有望成为潜在的传输效率高、抗氧化能力强的载流子传输材料.     

Collective Diffusion and Strange-Metal Transport

We study a particular combination of charge and heat currents, which is decoupled with the heat current. The "heat-decoupled" (HD) current can be transported by diffusion at long distances, when the thermoelectric effect is small, large, or balanced. Using holographic models with momentum relaxation, we illustrate that the different thermoelectric effects correspond to the high temperatures and strong disorder, low temperatures, or special critical index. Meanwhile, the Einstein-like relation and the diffusion/chaos relation may be emergent. Assuming that the existence and features of HD modes appear in strange metals, we can predict that when the thermoelectric effect is not very large, the scaling of resistivity is predominantly controlled by the HD susceptibility and chaos; otherwise more physics is required.